Multi -Party Manufacturers Come To Fight And Compete For The Core Link Of The Third -Generation Semiconductor

Foreword:

At present, the third -generation semiconductor materials are in a rapid development stage, and enterprises in various countries are actively deploying, with a view to occupying a favorable position in the future global semiconductor industry competition.

With the continuous progress of technology and the expansion of application fields, the third -generation semiconductor materials are expected to play an increasingly important role in the future electronic device market.

The relationship between AI development and third -generation semiconductors

Driven by the strong promotion of AI technology, the third -generation semiconductor industry is undergoing unprecedented development acceleration. At the same time, the two materials of SIC (silicon carbide) and GAN (nitride) are also gradually emerging in the AI field.

With its unique physical properties, SIC and GAN are suitable for creating high -temperature, high -frequency, radiating, and high -power electronic components, which greatly improves the overall efficiency of the system.

With the continuous improvement of AI technology in terms of functionality and power consumption, SIC and GAN's application advantages are increasingly prominent.

It is particularly worth mentioning that with the vigorous development of AI technology, the demand for data centers on power has shown explosive growth.

Faced with surge in electricity, data center operators urgently need to find innovative power solutions.

SIC and GAN power devices have become key technologies to reduce energy loss and reduce equipment overheating with their excellent efficiency performance.

This not only helps reduce the investment in heat dissipation equipment, but also significantly reduce system costs.

Therefore, SIC and GAN have become important technical choices for data centers to optimize energy efficiency.

The application of SIC and GAN power devices in the data center power system will be accelerated.

In terms of industrialization, Yingfeeling has recently expanded its SIC MOSFET product line and launched new products with voltage below 650V to meet the growing demand for AI server power supply.

At present, the application of SIC and GAN in the AI server shows breakthrough prospects, which is expected to further promote the comprehensive development of the AI industry chain including AIGC.

Multi -party manufacturers come to war to win the core link of the third -generation semiconductor

At present, the third -generation semiconductor has become an important area of global strategic competition, and has been supported by regional focus.

Against this background, many head manufacturers Ruyi's semiconductor, Yingfei Ling, Antian Semiconductor, San'an Optoelectronics, etc. have accelerated their layout in the third -generation semiconductor field, and the market competition has become increasingly fierce.

In response to the tight supply of third -generation semiconductor capacity, major manufacturers are actively responding.

Among them, Yingfeeling plans to invest 7 billion euros to deploy production capacity in Malaysia. It is expected to be opened in August this year, and SIC will be produced at the end of 2024.

An Shi Semiconductor also invested $ 200 million for the development of the next -generation broadband gap semiconductors such as SIC and GAN, and established production infrastructure in Hamburg, Germany.

Wolfspeed's Building 10 Materials factory has achieved the production target of 8 -inch wafers. It is estimated that by the end of 2024, its Mohot Valley SIC wafer plant will increase the use rate of wafers to about 25%.

Internationally, Samsung Electronics, SK Siltron, DB Hitek (DB Hitek), and ABOV Semiconductor jointly signed a semiconductor business agreement (MOU), which is committed to promoting advanced technology development projects for compound power semiconductor.

The project will first focus on the research and development of GAN power semiconductors, and all manufacturers expressed their purpose to commercialize GAN business.

South Korea has increased its support for the industry. It plans to provide 138.5 billion won of capital support from this year to 2028, and provide technical support to promote project development.

It is worth noting that San'an Optoelectronics and SEFC decided to jointly build a new 8 -inch silicon carbide device joint venture manufacturing plant in Chongqing, China, marking the deepening of cooperation between the two parties.

The total investment of the project is about 30 billion yuan, and it is expected that it will be built in the country's first 8 -inch silicon substrate and wafer manufacturing line after delivery.

With an annual production capacity of 480,000 pieces of 8 -inch silicon carbide base and a car -level MOSFET power chip, revenue is expected to reach 17 billion yuan, which will effectively promote Chongqing to build the third -generation compound semiconductor capital.

In addition, San'an Semiconductor's silicon carbide semiconductor industrialization project has also made significant progress.

The subsequent expansion of the Hunan San'an project will mainly produce 8 -inch SIC products. At present, the 8 -inch SIC substrate has begun trial production. The SIC chip is expected to be put into production in December.

Domestic companies have developed faster since last year

The third -generation semiconductor material industry covers diversified products and links. Among them, leading companies in the industry include Tianyue Advanced, Tianke Heida and Hebei Net Guang.

In the field of silicon carbide extension, Han Tiancheng and Puxing Electronics and other companies have performed well;

In the field of nitride, the field of nitrogen lining is a leading position by companies such as Naweiko, Tiando Heida, Nakahami Semiconductor and Core Source;

The field of carbonization is represented by Chinese Electricity Department, Smart Semiconductor, Jiangsu Nenghua and other companies.

At present, the third -generation semiconductor material industry in my country has initially formed five major development areas, including Beijing -Tianjin -Hebei, the Yangtze River Delta, the Pearl River Delta, the Fujian Triangle, and the central and western regions. Each cluster shows its unique development characteristics.

From the perspective of regional distribution, industrial chain companies in the third -generation semiconductor material industry have a layout in most provinces across the country.

Among them, the number of third -generation semiconductor materials in Henan Province is the most concentrated, and the number of enterprises in Shandong, Jiangsu, and Gansu is relatively large.

In 2023, Tianyue's advancement continued to achieve excessive results in terms of production capacity and large -scale supply capacity of the electro -conductive silicon carbide lining.

Its silicon carbide semiconductor material project is expected to achieve a comprehensive production in 2026. At that time, the annual capacity of 6 -inch electrophic silicon carbide substrate will reach 300,000 pieces.

In May of the same year, Tianda Heida and Yingfei Ling signed a long -term supply agreement, which will provide it with 6 -inch silicon carbide substrate and crystal ingots for manufacturing silicon carbide semiconductor products. It is expected that the supply will occupy Yingfei Ling's long -term demandThe two -digit share.

In August 2023, Tiando Henda's wholly -owned subsidiary Jiangsu Tianda Heida silicon carbide substrate second phase expansion project was officially started.

It is reported that the project will add 160,000 silicon carbide lining production capacity, and it is planned to complete the construction in June this year. It will be completed and put into operation in August. At that time, the total production capacity of Jiangsu Tianda Heida will reach 230,000 pieces.

On December 22 last year, the Guosheng Electronics Nanjing Overseas Material Industry Base Project project successfully went offline to the first Silicon -based Nitrogen 化 (Gan on Si).

In November 2023, He Lishi announced the acquisition of startups Zadient Technologies to officially enter the field of growth in silicon carbide powder and carbonized silicon crystal ingots.

In addition, since its establishment in August 2019, Baizhi Electronics focuses on the production of silicon carbide and nitride -related extensions, covering multiple applications such as GAN On Silicon, GAN SIC, and SIC On SIC.Fields.

At the end of October last year, Testy completed the B round of financing. Its 8 -inch silicon carbide fully automatic thinning equipment developed in it has been put into the market, and the 8 -inch double -sided polishing equipment has passed the process test and entered the mass production stage.

At the same time, China FAW is actively strengthening the construction of silicon carbide projects. Its M220 SIC electric drive has achieved mass production and offline, and the M190-150 (SIC) electric drive production preparation construction project is also planned to be approved.

The core tower electronic SIC module has achieved a large number of delivery. The total investment of the power module packaging production line of the Huzhou power module is 100 million yuan. It is expected to officially open the line in early 2024. It is expected that the annual output of 1 million sets of power modules will be expected to be 300 million yuan after the production.Essence

Guanlan New Materials also signed a contract with a 300 -ton silicon carbide base material project, and its products have been certified by many customers at home and abroad.

In addition, the total investment of 5 billion Zhongshun Tongli semiconductor power device project has also signed a contract. It is intended to build a special and car -level power device packaging and testing production line, and the group's corporate headquarters cluster.

The important direction of the semiconductor industry in the future

From the perspective of industry competition, US, European and Japan companies are leading in the SIC industry, while domestic manufacturers show the trend of accelerated alternatives.

In terms of specific participants, power semiconductors and platform companies have contributed significantly, such as Wolfspeed, II-VI, Ansonami in the United States, ST Italian Fa Fa and Yingfei Ling in Europe, as well as Japan's Rom, Mitsubishi, Fuji Motors, etc., all of which are the industry.The leader inside.

Observe from the market segmentation, the market concentration of the third -generation semiconductor is high.Among them, the SIC power device market, Cree, Rohm, Infineon, Toshiba, ST five manufacturers account for 80%of the world's market share;

GAN power device market, five manufacturers of EPC, Transphorm, GAN System, Infineon occupy 90%of the global market share;

In the GAN radio frequency device market, five manufacturers of Japanese residents, CREE, and Qorvo account for 85%of the world's market share.

According to a report issued by authoritative agencies such as YOLE and Yidu Data, the global market size of the third -generation semiconductor in 2021 was about 2.139 billion US dollars. It is expected that by 2027, the market will reach 8.896 billion US dollars.26.81%.

Especially in the fields of new energy vehicles, energy, communication and other fields, the third -generation semiconductor is expected to achieve explosive growth.

For the domestic market, according to the data of the Foresight Industry Research Institute, the output value of my country's third -generation semiconductor in 2020 has reached 10.5 billion yuan. It is expected that by 2027, the output value is expected to reach 70 billion yuan, and the average annual compound growth rate is as high as 32%, showing that it should be shown. The high prosperity and high -tech content of the industry.

It is estimated that by 2027, the market size of the power device in silicon carbide devices will increase from US $ 1.090 billion in 2021 to $ 6.297 billion, with a compound annual growth rate of about 34%.

The global new energy vehicle power semiconductor market size is expected to reach US $ 7.27 billion in 2025, CAGR is 43.6%, and the market size is expected to exceed US $ 17.12 billion by 2030.

According to TrendForce Ji State Consultation Research, the size of the global SIC power device market in 2023 was about $ 3.04 billion, and it is expected to rise to US $ 9.17 billion by 2028, with a CAGR of 25%;

The global GAN power device market size will increase from 180 million US dollars in 2022 to US $ 1.33 billion in 2026, and CAGR is as high as 65%.

end:

Through the above -mentioned strategies, head enterprises not only have the advantages in technology, production capacity and market layout, but also prepare for the possible market changes in the future.

This competition around the core link of the third -generation semiconductor is not only a technical contest, but also a competition for the integration capabilities of the industrial chain and market insight.

Manufacturers need to achieve collaborative innovation in multiple links such as materials research and development, device design, manufacturing technology, and packaging testing to stand out in the competition.

Part of the information reference: Global Semiconductor Observation: "Raising the Racing Play, the Third Generation Semiconductor War Battle", look at "Insight 2024: China's third -generation semiconductor material industry competition pattern and market share": "Third -generation semiconductor industry competition pattern, domestic development trend", science and technology Herald: "The Status and Future Outlook of the Third Generation Semiconductor", the semiconductor industry observation: "Third -generation semiconductor, Peak Duel", integrated core idea: "The third -generation semiconductor industry has accelerated the development, and the new energy industry chain is to grow driven core competitiveness "