Tyk Advanced Semiconductor Laboratory: Witness The Extreme Test Journey Of The Extraordinary Test Of The Core Micro 1200V Nitrogen Moisturizing Device

1. Test overview

The figure below shows the waveform of the switch test of the TO -247 packaged GAN HEMT device provided by the quantic core micro -provided to the Gan Hemt device under 1200V/15A. The grid voltage is 0-12V, and the companion device is a 1200V SIC diode.Test conditions are: accompaniment tube SIC diode, RON = ROFF = 10Ω, load inductor 400UH, VDS: 800V, VGS: 0 ~ 12V, ID: 15a.

testChallenge and solution

The main difficulty of the high -voltage switch to achieve high -voltage switches in the plane structure is to solve the problem of current collapse.The GAN power device's in -diversion resistance value RDSON is called a dynamic drive resistance. The detailed definition and testing method can be refer to the JEP173.Common GAN devices occur when the working voltage exceeds 700V, and the current collapse of the current, and the dynamic pitch resistance suddenly rises.When working in large currents and high frequencies, this problem is particularly serious, which will lead to the phenomenon such as heating of device, increasing pitch loss, and obstruction of the current.The new -generation 1200V power device provided by the quantum micro -core is the world's first nitride product to achieve a stable dynamic dynamic pitch resistance under high -frequency and high -voltage switches.

In order to verify the dynamic drive resistance performance, we also used a voltage probe with clamp function for clamp voltage testing.Due to the limited longitudinal resolution of the oscilloscope, even high -resolution oscilloscope, it is difficult to accurately test the voltage of a few volts in high voltage range.According to the JEP173 test guide provided by Jedec, it is recommended to test the low -voltage VDS under the duration circuit through the clamp circuit.Due to the low test voltage of the GAN device, the previous clamp circuit can usually meet the test requirements of 500V resistance.In addition, the clamp circuit will introduce a large fluctuation during the switching process, and the volatile duration is longer, which affects the judgment of the dynamic drive resistance.This time, we used the 1200V resistant clamp probe for the VDS test to obtain the clamp test results under higher voltage conditions.

Test results

After obtaining the clamping VDS-CLAMP voltage and the direction current ID waveform, you can get the dynamic pitch resistance curve of the device in the direction state by calculating.In the process of bilateral testing, we connect the piping probe at the same time. The measured circuit is shown in the figure below:

The figure below adds the waveform result of the clamp voltage test function. Among them, CH1 is a gate voltage VGS, CH2 is the source drain voltage VDS, C3 is a drain current ID, C4 is the source drain voltage VDS-CLAMP after clamping the clamping vds-CLAMP, M1 is the calculation result of the dynamic drive resistance RDSON. The calculation method M1 = C4 / C3.The test waveform of the M1 can be seen in the dynamic drive waveform curve during the turnover phase.It can be seen that the clamp voltage waveform is relatively stable, and the waveform fluctuation time is short. You can obtain a stable dynamic dynamic drive resistance read in hundreds of nails.

in conclusion

According to calculations, when VBUS is equal to 400V, the dynamic pitch resistance is about 93MΩ; when VBUS is equal to 600V, the dynamic pitch resistance is about 95m ohm; when VBUS is equal to 800V, the dynamic conduction resistance is about 101MΩ.Compared with the tested resistance of the diverted resistance under static conditions, the voltage of the device is very limited as the dynamic direction resistance of the device is very limited, and the resistance value of the device is very limited, and the resistance value is very close to the results of the static pitch resistance.

2. Industry impact