[Core News] It is rumored that TSMC’s advanced process prices will increase again to offset the cost impact of 2nm

1. TSMC’s advanced process prices will increase again in 2025, with 2nm quotations reaching as high as US$30,000

• 5nm/4nm/3nm OEM price increaseThat was up from 4% previously forecast.
• Reasons for price increase: high operating costs of overseas factories,Huge investment in 2nm R&D and factory construction
• 2nm (Baoshan factory) will ramp up production in Q4 of 2025, with a monthly production capacity of 30,000 pieces.The price of a single wafer is approximately US$30,000.

2. TrendForce: Mature process production capacity will increase by 6% annually in 2025, and prices will be under pressure

• Domestic wafer fabs become the main force in expanding production of mature processes
• Advanced process (5/4/3nm) due to demand for AI, HPC, and flagship mobile phones,Annual capacity utilization is fully loaded
• Mature processes of 28nm and above are recovering moderately, with utilization rates increasing by 5%~10% in the second half of the year.

3. SK Hynix’s Q3 performance hit a record high, and HBM’s revenue surged more than 3 times

• Revenue 17.57 trillion won,YoY + 94%;Net profit 5.75 trillion won, +40% month-on-month
• HBM sales +330% year-on-year, +70% month-on-month
• HBM accounted for 30% of DRAM revenue in Q3,Q4 is expected to rise to 40%
• Accelerating the advancement of HBM3E, the 12-layer version will be available in Q4

4. Ming-Chi Kuo: If Arm cancels Qualcomm’s authorization, it will be a lose-lose situation

• Arm and Qualcomm have disputes over Nuvia acquisition and Oryon architecture licensing
• analysts thinkThe probability of authorization cancellation is extremely low, there is a high probability of reconciliation in the end
• Once a breakup occurs, both parties and the industry chain will suffer heavy losses.

5. Infineon releases the world’s first 2000V CoolSiC Schottky diode

• The first in the industry2000VDiscrete SiC Schottky Diode for 1500VDC DC link
• Current 10A~80A, suitable forPhotovoltaic and new energy vehicle chargingHigh voltage scenarios
• Adopted TO-247PLUS-4-HCC package, can be used with 2000V SiC MOSFET in the same package