A quick overview of the original eNVM solutions of major MCUs: for new applications such as automotive and edge AI

1. Industry background: eFlash is approaching its limit, and eNVM will take over.

• After 40nm, eFlash requires an additional mask layer.Difficult to scale down, high cost, and uneconomical
• eNVM has both:Non-volatile + high-speed reading and writing + low power consumption + advanced process compatibility
• Target scenario:Automotive MCU, edge AI, high-performance IoT, domain controller

2. Comparison of eNVM technical routes of the five major MCU original manufacturers

1. STMicroelectronics ST →ePCM phase change storage

• Representative products: Stellar P/G series automotive MCUs
• Process: 28nm FD-SOI
• Principle: GST alloy inCrystalline / Amorphousphase change storage data
• Advantages: faster low-voltage reading and writing, lower cost than eFlash at 28nm, low power consumption and high durability
• Positioning: High-end automotive MCU

2. Texas Instruments TI →FRAM ferroelectric memory

• Representative product: MSP430 ultra-low power consumption series
• Principle: Data storage of polarization characteristics of ferroelectric materials
• Advantages:Extremely fast reading and writing, extremely low power consumption, no refresh current required
• Positioning: Ultra-low power MCU, industrial sensing, battery IoT

3. Infineon →RRAM resistive switching memory

• Partner: TSMC
• Applications: Next Generation AURIX Automotive MCUs
• Principle: changing the resistance of the dielectric to achieve storage
• Advantages: simple structure, high density, much lower power consumption than Flash, capable of multi-bit storage
• Positioning: 28nm automotive MCU, pursuingSmall size, low power consumption, high performance

4. NXP →eMRAM magnetoresistive memory

• Partner: TSMC
• Process: 16nm FinFET
• Application: S32Z/S32E automotive processor
• Advantages: nearly unlimited erasing, extremely fast speed, seamless integration with advanced logic processes
• Positioning: high-end vehicle control, domain controller

5. Renesas →STT-MRAM spin injection MRAM

• Route: Independent research and development of STT-MRAM
• Process: 16nm/22nm
• Features: Speed and energy efficiency are significantly better than eFlash
• Positioning:IoT-based, can be expanded to vehicle specifications in the future

3. Summary: New storage pattern of advanced process MCUs

• eFlash: 40nm and above mature nodes are still mainstream
• eNVM: 28nm/16nm advanced processThe only feasible solution
• Technology flourishes:
  • High-end car specifications:ST (ePCM), Infineon (RRAM), NXP (MRAM)
  • Ultra-low power consumption:TI(FRAM)
  • IoT / General:Renesas (MRAM)