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APSME 2025 Asia International Power Semiconductor, Materials And Equipment Technology Exhibition

APSME 2025 Asia International Power Semiconductor, Materials and Equipment Technology Exhibition


1. Exhibition background

Driven by advantageous industries such as photovoltaics and new energy vehicles, China's power semiconductor and third-generation semiconductor industries have ushered in a period of rapid growth, with technological breakthroughs and supply chain restructuring accelerating.In order to focus on cutting-edge technology and promote collaborative innovation in the industrial chain,APSME 2025 Asia International Power Semiconductor, Materials and Equipment Technology ExhibitionIt will be held in Guangzhou next November.

2. Basic information

  • Exhibition name:APSME 2025 Asia International Power Semiconductor, Materials and Equipment Technology Exhibition
  • Holding time: November 20-22, 2025
  • Venue:Guangzhou Poly World Trade Expo Center
  • Organizer: Shenzhen Xinxinneng Exhibition Co., Ltd., Guangzhou Harvest Watson Exhibition Co., Ltd. (United Semiconductor Industry Organization)
  • Exhibition scale:Planned area20000㎡, expected300Global exhibitors and **10000+** professional visitors attended the conference

3. Scope of core exhibits

Covering the entire power semiconductor industry chain, focusing on six core areas:
  1. Power devices: IGBT, MOSFET, power IC, diode, transistor, etc.;
  2. third generation semiconductor materials: Silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond and other wide bandgap materials;
  3. Manufacturing equipment and parts: Single crystal furnace, photolithography machine, etching machine, ion implantation equipment, die bonding machine, bonding machine, testing machine, etc.;
  4. Design and development: EDA, IP design, embedded software, IDM/Fabless solutions;
  5. Package testing: Screen printing, vacuum reflow soldering, X-RAY inspection, laser marking, power terminal bonding, etc.;
  6. Thermal management: Thermal interface materials, graphene, high thermal conductivity packaging materials (Al/Cu/Mo), phase change thermal storage materials, TEC thermoelectric refrigeration devices, etc.

4. Professional audience lineup

Gathering the procurement and technical teams of global industry leaders, including:
  • Semiconductor manufacturers: Huawei, BYD Semiconductor, STMicroelectronics, Infineon, ROHM Semiconductor, Silan Microelectronics, China Resources Microelectronics, Core Energy, Penjie, etc.;
  • Terminal applications: Xpeng Motors, FAW Hongqi, Guangzhou Automobile Group, CATL, Sungrow, Inovance Technology, Midea, etc.

5. Concurrent technical forum

Focusing on cutting-edge hot spots, eight theme forums will be held to accurately match the technical direction of the exhibition area:
  • Automotive Grade Power Semiconductor Forum
  • Power Semiconductor IGBT/SiC Industry Forum
  • Compound Semiconductor Technology and Application Development Forum
  • GaN gallium nitride power device technology forum
  • Si Silicon/SiC Silicon Carbide Power MOSFET Technology Forum
  • Silicon carbide substrate material growth and processing technology innovation forum
  • The Third Generation Semiconductor Material Manufacturing and Equipment Technology Summit Forum
  • Power Semiconductor Device Performance Development and Testing Technology Forum

6. Exhibition value

As a benchmark exhibition in the power semiconductor field in Asia, APSME 2025 will createFull industry chain display, one-stop purchasing, cutting-edge technology exchangeThree core platforms:
  • Help upstream material/equipment manufacturers expand their markets and connect with high-quality customers;
  • Provide technology display and brand promotion windows for midstream device/module companies;
  • Empower downstream terminal companies such as new energy vehicles, photovoltaics, and industrial control to reduce costs, increase efficiency, and upgrade supply chains;
  • Promote the deep integration of industry, academia and research, and accelerate the implementation and localization of third-generation semiconductor technology.


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