[Core News] Silicon wafer shipments continue to grow in the third quarter, Renesas launches new 3nm automotive SoC

1. Global silicon wafer shipments increased year-on-year in the third quarter

• Shipments:3214 MSI, month-on-month + 5.9%, year-on-year + 6.8%
• Momentum: Strong demand for AI advanced processes and falling supply chain inventories
• Structural differentiation: automotive/industrial demand is weak, consumer electronics is partially recovering
• Outlook: The recovery will continue in 2025, but it will be difficult to return to the peak in 2022

2. Renesas releases 3nm automotive SoC——R-Car X5H

• Process: TSMC3nm
• AI computing power: Gundam400 TOPS
• CPU: 32×Cortex-A720AE + 6×Cortex-R52 (supports ASIL D)
• Application: ADAS, smart cockpit, vehicle gateway
• Progress: Samples will be delivered in the first half of 2025.Mass production in the second half of 2027

3. TSMC 3/5nm is expected to be fully loaded in the first half of 2025

• Flagship mobile phone chips (Qualcomm, MediaTek) drive demand
• 5nm process utilization rate is expectedBreakthrough 100%
• Limited impact from Apple’s order reduction, AI chips continue to support

4. It is rumored that Samsung’s second-generation 3nm yield rate is only 20%, Exynos may switch to TSMC

• Samsung GAA 3nm yield rate is sluggish, foundry competitiveness is under pressure
• Rumor has it that its own Exynos processor will be manufactured by TSMC
• The final cooperation still needs to be confirmed, and it will take time to implement

5. The semiconductor back-end equipment market bottomed out in the fourth quarter

• Q3 is expected to fall to$1.26 billion
• Q4 rebounded to$1.31 billion, month-on-month +3.8%
• Expected to reach Q1 in 2025$1.74 billion, +32.3% year-on-year

6. Tianyue Advanced launches **300mm (12 inches)** N-type SiC substrate

• The first in the world to launch 12-inch silicon carbide substrate
• Significantly increase single-chip output and reduce unit costs
• Support high-power applications such as new energy vehicles, photovoltaics, and high-voltage fast charging

7. Tianke Heda starts the second phase of 8-inch SiC substrate expansion

• Beijing base construction begins8-inch silicon carbide substrateIntelligent production line
• After full production, the production capacity will be greatly increased and the leading position will be consolidated.