[Core Information] NXP Q2 revenue declines year-on-year, ON Semiconductor supplies Volkswagen electric cars, Samsung increases HBM/DRAM
1. NXP Q2 revenue fell 5% year-on-year to US$3.13 billion
NXP released its second quarter financial report for 2024, with quarterly revenue of US$3.13 billion, a year-on-year decrease of 5%; GAAP gross profit margin was 57.3%, and net profit attributable to shareholders was US$658 million, a year-on-year decrease of 5.7%.
Performance differentiation by business:
Automotive business revenue was US$1.728 billion, down 7% year-on-year and 4% month-on-month;
Industrial and IoT business revenue was US$616 million, an increase of 7% year-on-year and month-on-month, becoming a performance highlight.
Performance Outlook: Q3 revenue is expected to be 3.15-3.35 billion euros, a year-on-year decrease of approximately 2%-8%; gross profit margin remains in the range of 57.0%-58.0%.
2. ON Semiconductor enters Volkswagen’s next-generation electric vehicles and supplies complete SiC power supply solutions
ON Semiconductor and Volkswagen Group have reached a multi-year strategic cooperation to become a scalable platform for VolkswagenNext generation main drive inverter core supplier, providing a complete set of power box solutions.
Plan deploymentEliteSiC M3e MOSFETSilicon carbide technology can flexibly expand the power and cover the needs of large and small power inverters for all vehicle types. It has the advantages of small package, high power and low energy consumption, helping Volkswagen to quickly iterate high-voltage electric drive platforms and consolidate its leadership in electric vehicle technology.
3. Samsung’s strategic tilt: Prioritize HBM and DRAM, postpone NAND and foundry expansion
Samsung Hwaseong Production Line 17 has mass-produced HBM3 and begun supplying NVIDIA; in order to balance the general DRAM gap caused by HBM production capacity squeeze,Pyeongtaek P4 factory converted to dedicated DRAM production line。
The company has a clear strategy: to suspend the construction of the P4 factory foundry business, and has no new NAND flash memory investment plans; the existing scalable production space will be given priority to DRAM, and resources will be concentrated to seize the booming AI storage market.
4. It is rumored that TSMC bids a premium for Innolux’s Tainan factory to lay out advanced packaging
Industry news shows that TSMC visited Innolux's Tainan factory on-site, intending to expand advanced packaging production capacity through acquisition and cooperation; the acquisition conditions and quotations givenBetter than Micron, more competitive.
At present, both parties have not commented on market rumors. Innolux will finalize the final plan of choosing between TSMC and Micron as soon as this week. Once implemented, it will further strengthen TSMC's advanced packaging production capacity.
5. The number of EUV exposure layers in Samsung’s 2nm process has increased by 30%, and DRAM has also accelerated the introduction of EUV.
Compared with the existing 3nm, Samsung’s next-generation 2nm processThe number of EUV exposure layers increases by over 30%, reaching the 20-30 layer range; in the SF1.4 process planned for mass production in 2027, the number of EUV layers will exceed 30 layers.
At the same time, EUV is fully popularized in advanced DRAM nodes: Samsung’s sixth-generation 1c/1γ process uses 6-7 layers of EUV, SK Hynix uses 5 layers, and Micron also introduced EUV lithography for the first time at the same node. The threshold for high-end storage processes continues to rise.
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